Micron 2400 512GB Nvme SSD Black

Brand	Micron
Manufacturer	Micron
Model Number	MTFDKBK512QFM-1BD1AABYYR

The Micron 2400 512GB Nvme SSD Black is a high-performance solid-state drive (SSD) with a storage capacity of 512GB. It features the world's first and most advanced 176-layer QLC NAND-based PCIe Gen4 technology, making it ideal for high-capacity storage in thin and light devices. It is available in three compact M.2 form factors and offers up to two times the performance of the previous generation. It is designed to support the Project Athena specification, enabling long battery life and reduced power consumption. The product specifications include a sequential read speed of 4,200 MB/s, sequential write speed of 1,800 MB/s, random read and write speeds of 400K IOPS, and an endurance of 150TB. It has a PCIe Gen4 interface and uses Micron 176-layer QLC NAND technology.

FEATURES
The Micron 2400 NVMe SSD is the worlds first and most advanced 176-layer QLC NAND-based PCIe Gen4 NVMe SSD. The Micron 2400 SSD is built with industry-leading storage density and is the worlds first 2TB SSD available in a 22x30mm form factor. Offered in three compact M.2 form factors, this QLC SSD is ideal for high-capacity storage in form factors to fit thin and light designs without compromising the user experience.
The Micron 2400 SSD, with its innovative 176-layer QLC NAND combined with PCIe Gen4, delivers up to two times the performance versus the previous generation, bringing quicker system startup and improved performance to client applications.
The Micron 2400 is designed to support the Project Athena specification, enabling over nine hours of battery life even with HD displays. The 2400 SSD helps reduce battery demand with active idle power consumption that is 50% lower than the prior generation for hours of untethered productivity and entertainment.
PRODUCT SPECIFICATIONS
Brand
Micron
Item model number
MTFDKBK512QFM-1BD1AABYYR
Product Type
SSD
Capacity
512GB
Sequential reads (MB/s)
4,200
Sequential writes (MB/s)
1,800
Random reads (K IOPS)
400K
Random writes (K IOPS)
400K
Endurance (Total Bytes Written in TB)
150TB
Interface
PCIe Gen4, NVMe 1.4
Form factor
M.2 (22*30)
NAND
Micron 176-layer QLC NAND
Weight